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|dc.identifier.citation||JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.7, no.5, pp.483 - 487||-|
|dc.description.abstract||Indium zinc tin oxide thin films were deposited onto the alkaline-free glass substrate by RF magnetron sputtering. Sintered ceramic target with different chemical composition, i.e., IZTO15, IZTO19, IZTO20, IZTO21 and IZTO25, where Sn contents were 15, 19, 20, 21 and 25 at%, respectively, while In content was fixed at 60%, were employed for deposition process. The effects of composition especially Sn content on structural, optical and electrical properties of deposited films were investigated. The deposition process was carried out in pure argon for 25 minutes either at room temperature or at 400 degrees C. Average transmittance was measured to be over 80% for the films deposited at 400 degrees C regardless of Sn content. Sheet resistance value decreased significantly as Sn content increased for the films deposited at 400 degrees C, while it increased when deposited at room temperature. It is suggested that Sn impurities acted as an effective dopant at higher substrate temperature. Plasma wavelength was estimated and was in the range of 31 similar to 77 mu m. From the calculated figure of merit, IZTO film with Sn content of 25 at% showed the best performance with the highest value of 14.6 x 10(-3) ohm(-1). After rapid thermal annealing treatment, all of the films showed resistivity values below 5 x 10(-4) ohm . cm, except IZTO15.||-|
|dc.publisher||AMER SCIENTIFIC PUBLISHERS||-|
|dc.title||Effect of Composition in Transparent Conducting Indium Zinc Tin Oxide Thin Films Deposited by RF Magnetron Sputtering||-|
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