Characterization of sol-fel derived antimony-doped tin oxide thin films for transparent conductive oxide application

Title
Characterization of sol-fel derived antimony-doped tin oxide thin films for transparent conductive oxide application
Author(s)
이희영우동찬마홍찬구창영
Keywords
Annealing; Electric conductivity; Nanocomposites; Opacity; Semiconductor doping; Sol-gel process; Sol-gels; Substrates; Thin films; Tin; Annealing condition; Annealing environment; Antimony-doped tin oxide; Chemical solution deposition method; Crystallinities; Doping concentration; Electrical resistivity; Glass substrates; Hall measurements; Low vacuum; Sb doping; Sb-doped; Sol gel solutions; Sol-gel routes; Solution-processed; Transparent conductive oxide thin film; Transparent conductive oxides; Visible range; Tin oxides
Issue Date
201210
Citation
Transactions on Electrical and Electronic Materials, v.13, no.5, pp.241 - 244
Abstract
Antimony doped tin oxide (ATO) thin films on glass substrate were prepared by the chemical solution deposition (CSD) method, using sol-gel solution synthesized by non-alkoxide precursors and the sol-gel route. The crystallinity and electrical properties of ATO thin films were investigated as a function of the annealing condition (both annealing environments and temperatures), and antimony (Sb) doping concentration. Electrical resistivity, carrier concentration, Hall mobility and optical transmittance of ATO thin films were improved by Sb doping up to 5~8 mol% and annealing in a low vacuum atmosphere, compared to the undoped tin oxide counterpart. 5 mol% Sb doped ATO film annealed at 550��C in a low vacuum atmosphere showed the highest electrical properties, with electrical resistivity of about 8~10 �� 10-3 �ء�cm, and optical transmittance of ~85% in the visible range. Our research demonstrates the feasibility of low-cost solution-processed transparent conductive oxide thin films, by controlling the appropriate doping concentration and annealing conditions. ? 2012 KIEEME.
URI
http://hdl.handle.net/YU.REPOSITORY/27081http://dx.doi.org/10.4313/TEEM.2012.13.5.241
ISSN
1229-7607
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공과대학 > 신소재공학부 > Articles
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