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dc.contributor.author손영구ko
dc.contributor.author조인수ko
dc.contributor.author민봉기ko
dc.contributor.author주상우ko
dc.date.accessioned2015-12-17T02:06:20Z-
dc.date.available2015-12-17T02:06:20Z-
dc.date.created2015-11-13-
dc.date.issued201211-
dc.identifier.citationMATERIALS LETTERS, v.86, pp.132 - 135-
dc.identifier.issn0167-577X-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/27022-
dc.identifier.urihttp://dx.doi.org/10.1016/j.matlet.2012.07.050-
dc.description.abstractWe have successfully prepared gram-scale 1-D SbSI microstructures, and characterized in detail using thermogravimetric (TG) analysis, optical microscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) crystallography, UV-vis absorption, and current-voltage measurement. The growth direction of SbSI is found to be [001]. The interplanar distances for [001] and [220] are measured to be 0.40 and 0.33 nm, respectively. The indirect band gap for 1-D SbSI is determined to be 1.84 (+/- 0.1) eV. On the basis of TG data, SbSI decomposes to Sb2S3 residue at around 324 degrees C, and it further decomposes to Sb residue upon heating above 710 degrees C. The current at an applied voltage of 10.0 V was measured to be 4 x 10(-2) nA for a single SbSI rod. In addition, we have synthesized 1-D Sb2S3 (antimony sulfide) with a band gap of 1.55 eV, and included some of its characteristics for comparative discussion. (C) 2012 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectX-RAY-DIFFRACTION-
dc.subjectSB2S3 NANORIBBONS-
dc.subjectRAMAN-SCATTERING-
dc.subjectLARGE-SCALE-
dc.subjectNANOSTRUCTURES-
dc.subjectNANOCRYSTALS-
dc.subjectETHANOGEL-
dc.subjectNANORODS-
dc.subjectROUTE-
dc.titleOne-dimensional single crystalline antimony sulfur iodide, SbSI-
dc.typeArticle-
dc.identifier.wosid000309095400036-
dc.identifier.scopusid2-s2.0-84865652368-
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이과대학 > 화학생화학부 > Articles
문과대학 > 중국언어문화학과 > Articles
공과대학 > 기계공학부 > Articles
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