One-dimensional single crystalline antimony sulfur iodide, SbSI

Title
One-dimensional single crystalline antimony sulfur iodide, SbSI
Author(s)
손영구조인수민봉기주상우
Keywords
X-RAY-DIFFRACTION; SB2S3 NANORIBBONS; RAMAN-SCATTERING; LARGE-SCALE; NANOSTRUCTURES; NANOCRYSTALS; ETHANOGEL; NANORODS; ROUTE
Issue Date
201211
Publisher
ELSEVIER SCIENCE BV
Citation
MATERIALS LETTERS, v.86, pp.132 - 135
Abstract
We have successfully prepared gram-scale 1-D SbSI microstructures, and characterized in detail using thermogravimetric (TG) analysis, optical microscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) crystallography, UV-vis absorption, and current-voltage measurement. The growth direction of SbSI is found to be [001]. The interplanar distances for [001] and [220] are measured to be 0.40 and 0.33 nm, respectively. The indirect band gap for 1-D SbSI is determined to be 1.84 (+/- 0.1) eV. On the basis of TG data, SbSI decomposes to Sb2S3 residue at around 324 degrees C, and it further decomposes to Sb residue upon heating above 710 degrees C. The current at an applied voltage of 10.0 V was measured to be 4 x 10(-2) nA for a single SbSI rod. In addition, we have synthesized 1-D Sb2S3 (antimony sulfide) with a band gap of 1.55 eV, and included some of its characteristics for comparative discussion. (C) 2012 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/27022http://dx.doi.org/10.1016/j.matlet.2012.07.050
ISSN
0167-577X
Appears in Collections:
이과대학 > 화학생화학부 > Articles
문과대학 > 중국언어문화학과 > Articles
공과대학 > 기계공학부 > Articles
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