The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Title
The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy
Author(s)
김종수Pilkyung Moon[Pilkyung Moon]J. D. Lee[J. D. Lee]S. K. Ha[S. K. Ha]E. H. Lee[E. H. Lee]W. J. Choi[W. J. Choi]J. D. Song[J. D. Song]L. S. Dang[L. S. Dang]
Keywords
OPTICAL-PROPERTIES; GAAS; DENSITY
Issue Date
201211
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.445 - 447
Abstract
We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy, and obtained the geometries of the dots by scanning transmission electron microscopy. Post-growth thermal annealing is essential for the optical activation of quantum dots grown by droplet epitaxy. We measured the emission energy shifts of the dots and the underlying superlattice by post- growth thermal annealing, and specified the emission from dots by selectively etching the structure down to a low layer of quantum dots. We studied the influence of the degree of annealing on the optical properties of the dots from the peak shifts of the superlattice, since the superlattice has a uniform and well-defined geometry. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
http://hdl.handle.net/YU.REPOSITORY/26969http://dx.doi.org/10.1002/pssr.201206369
ISSN
1862-6254
Appears in Collections:
이과대학 > 물리학과 > Articles
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