Photoluminescence studies of ZnO thin films prepared using a laser-assisted sol-gel method

Title
Photoluminescence studies of ZnO thin films prepared using a laser-assisted sol-gel method
Author(s)
김종수Min Su Kim[Min Su Kim]Jewon Lee[Jewon Lee]Yangsoo Kim[Yangsoo Kim]Jae-Young Leem[Jae-Young Leem]이상헌소원섭정재학
Keywords
ZINC-OXIDE; OPTICAL-PROPERTIES; STRUCTURAL-PROPERTIES; IRRADIATION; GROWTH; NANOCRYSTALS; LUMINESCENCE; TEMPERATURE; LAYERS; SIZE
Issue Date
201212
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.11, pp.1826 - 1830
Abstract
ZnO thin films were grown on Si(100) substrates by using a laser-assisted sol-gel method involving irradiation from a 325-nm He-Cd laser. In contrast to conventionally-synthesized sol-gel ZnO thin films, the surfaces of those grown using the laser-assisted sol-gel method were much smoother. The optical properties of the ZnO thin films were investigated using temperature-dependent photoluminescence (PL). In the room-temperature PL spectra, the intensity of the blue-green emission was dramatically decreased by laser irradiation during the stages of deposition and post-heat treatment. Moreover, the full width at half maximum of the near-band-edge emission peaks was decreased by the laser irradiation. The activation energy of the laser-assisted sol-gel ZnO thin films was determined to be similar to 99 meV, and the values of the fitting parameters alpha and beta for Varshni's empirical equation were 4 x 10(-3) eV/K and 4.9 x 10(3) K, respectively. Another fitting based on the thermal broadening effect of the excitonic emission peak revealed a decreased exciton-phonon interaction in the laser-assisted ZnO thin films.
URI
http://hdl.handle.net/YU.REPOSITORY/26861http://dx.doi.org/10.3938/jkps.61.1826
ISSN
0374-4884
Appears in Collections:
이과대학 > 물리학과 > Articles
공과대학 > 화학공학부 > Articles
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