Characteristics of p-type gallium tin oxide (GTO) thin films prepared by RF magnetron sputtering

Title
Characteristics of p-type gallium tin oxide (GTO) thin films prepared by RF magnetron sputtering
Author(s)
이희영페르디야노피난다다미시마홍찬
Keywords
SPRAY-PYROLYSIS; TRANSPARENT; SNO2; DEPOSITION; ZNO
Issue Date
201212
Publisher
KOREAN ASSOC CRYSTAL GROWTH, INC
Citation
JOURNAL OF CERAMIC PROCESSING RESEARCH, v.13, pp.S181 - S185
Abstract
Transparent p-type gallium-doped tin oxide (GTO) thin films with 20 at% Ga doping were successfully prepared on fused silica glass substrates by RF magnetron sputtering. GTO films were deposited under different processing variables such as RF power from 125 to 175 W, working pressures from 5 to 8 mtorr and annealing in pure oxygen ambient at various temperatures from 400 to 700 degrees C. The electrical properties determined by Hall effect measurements showed that the processing variables for GTO deposition played a strong influence on the conductivity type where it changed from n-type to p-type as variables adjusted.
URI
http://hdl.handle.net/YU.REPOSITORY/26791
ISSN
1229-9162
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공과대학 > 신소재공학부 > Articles
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