Temperature-dependent Photoluminescence Study on Aluminum-doped Nanocrystalline ZnO Thin Films by Sol-gel Dip-coating Method

Title
Temperature-dependent Photoluminescence Study on Aluminum-doped Nanocrystalline ZnO Thin Films by Sol-gel Dip-coating Method
Author(s)
정재학남기웅[남기웅]이상헌[이상헌]소원섭[소원섭]윤현식[윤현식]박형길[박형길]김소아람[김소아람]김민수[김민수]Jewon Lee[Jewon Lee]Jae-Young Leem[Jae-Young Leem]
Keywords
ZINC-OXIDE FILMS; STRUCTURAL-PROPERTIES; DEPOSITION; GROWTH; GLASS
Issue Date
201301
Publisher
KOREAN CHEMICAL SOC
Citation
BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.34, no.1, pp.95 - 98
Abstract
The photoluminescence (PT) properties of Al-doped ZnO thin films grown by the sol-gel dip-coating method have been investigated. At 12 K, nine distinct PL peaks were observed at 2.037, 2.592, 2.832, 3.027, 3.177, 3.216, 3.260, 3.303, and 3.354 eV. The deep-level emissions (2.037, 2.592, 2.832, and 3.027 eV) were attributed to native defects. The near-band-edge (NBE) emission peaks at 3.354, 3.303, 3.260, 3.216, and 3.177 eV were attributed to the emission of the neutral-donor-bound excitons ((DX)-X-0), two-electron satellite (TES), free-to-neutral-acceptors (e,A(0)), donor-acceptor pairs (DAP), and second-order longitudinal optical (2LO) phonon replicas of the TES (1ES-2LO), respectively. According to Haynes' empirical rule, we calculated the energy of a free exciton (FX) to be 3.374 eV. The thermal activation energy for (DX)-X-0 in the nanocrystalline ZnO thin film was found to be similar to 25 meV, corresponding to the thermal dissociation energy required for (DX)-X-0 transitions.
URI
http://hdl.handle.net/YU.REPOSITORY/26738http://dx.doi.org/10.5012/bkcs.2013.34.1.95
ISSN
0253-2964
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공과대학 > 화학공학부 > Articles
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