Rapid thermal processing of Cu-rich (InGa)(2)Se-3/CuSe bilayer precursors with an inset NaF layer

Title
Rapid thermal processing of Cu-rich (InGa)(2)Se-3/CuSe bilayer precursors with an inset NaF layer
Author(s)
김성철구자석김우경
Keywords
CU(IN,GA)SE-2 THIN-FILMS; CIGS SOLAR-CELLS; SODIUM; GROWTH
Issue Date
201303
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.531, pp.233 - 237
Abstract
The use of inset thin NaF layers during the rapid thermal processing of stacked bilayer precursors supplied Na rapidly during the fast formation of Cu(InGa)Se-2 with compositional uniformity. Metal selenide precursors and a thin NaF layer (10-40 nm)were deposited on Na-free glass substrate by molecular beam epitaxy to yield substrate/Mo/(InGa)(2)Se-3/NaF/CuSe structures. The bilayer precursors were reactively annealed in a quartz tube furnace heated by infrared radiation under a Se atmosphere. Cu(InGa)Se-2 formed from these precursors within 2-5 min and Na diffusion into the Cu(InGa)Se-2 layer was saturatedwithin 2 min. The Na doping resulted in increased (112)preferred orientation of the Cu(InGa)Se-2 phase and the formation of thicker MoSe2 layers. (C) 2013 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/26280http://dx.doi.org/10.1016/j.tsf.2013.01.088
ISSN
0040-6090
Appears in Collections:
중앙도서관 > rims journal
공과대학 > 화학공학부 > Articles
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