Rapid thermal processing of Cu-rich (InGa)(2)Se-3/CuSe bilayer precursors with an inset NaF layer
- Rapid thermal processing of Cu-rich (InGa)(2)Se-3/CuSe bilayer precursors with an inset NaF layer
- 김성철; 구자석; 김우경
- CU(IN,GA)SE-2 THIN-FILMS; CIGS SOLAR-CELLS; SODIUM; GROWTH
- Issue Date
- ELSEVIER SCIENCE SA
- THIN SOLID FILMS, v.531, pp.233 - 237
- The use of inset thin NaF layers during the rapid thermal processing of stacked bilayer precursors supplied Na rapidly during the fast formation of Cu(InGa)Se-2 with compositional uniformity. Metal selenide precursors and a thin NaF layer (10-40 nm)were deposited on Na-free glass substrate by molecular beam epitaxy to yield substrate/Mo/(InGa)(2)Se-3/NaF/CuSe structures. The bilayer precursors were reactively annealed in a quartz tube furnace heated by infrared radiation under a Se atmosphere. Cu(InGa)Se-2 formed from these precursors within 2-5 min and Na diffusion into the Cu(InGa)Se-2 layer was saturatedwithin 2 min. The Na doping resulted in increased (112)preferred orientation of the Cu(InGa)Se-2 phase and the formation of thicker MoSe2 layers. (C) 2013 Elsevier B.V. All rights reserved.
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