Comparison of thin film properties and selenization behavior of CuGaIn precursors prepared by co-evaporation and co-sputtering
- Comparison of thin film properties and selenization behavior of CuGaIn precursors prepared by co-evaporation and co-sputtering
- 한재성; 구자석; 정호섭; 김우경
- X-RAY-DIFFRACTION; SOLAR-CELLS; KINETICS; SYSTEM
- Issue Date
- ELSEVIER SCIENCE SA
- JOURNAL OF ALLOYS AND COMPOUNDS, v.552, pp.131 - 136
- CuGaIn precursors prepared by co-evaporation and co-sputtering processes were compared. The morphologies, degree of incorporation of Ga into CIGS, and the MoSe2 layer thicknesses of Cu(InGa)Se-2 thin films fabricated by the rapid thermal annealing of metal precursors deposited by the two different processes differed owing to the precursor feature differences. Furthermore, a comparison of the isothermal in situ high-temperature X-ray scans of both precursors at 300 degrees C revealed that the selenization rate of the co-evaporated CuGaIn precursor is much higher than that of the co-sputtered precursor, which might be due to the lower film density of co-evaporated precursor. It is suggested that co-evaporated precursor should be a promising alternative for sputtered precursor to overcome the long process time and low throughput issue of 2-step sputter-selenization process, and simultaneously improve Ga incorporation and surface smoothness. (C) 2012 Elsevier B. V. All rights reserved.
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