Improved blue electroluminescence in InGaN/GaN multiple-quantum well light-emitting diodes with an electron blocking layer

Title
Improved blue electroluminescence in InGaN/GaN multiple-quantum well light-emitting diodes with an electron blocking layer
Author(s)
김종수Giwoong Nam[Giwoong Nam]Hyunsik Yoon[Hyunsik Yoon]Min Su Kim[Min Su Kim]Jewon Lee[Jewon Lee]Jae-Young Leem[Jae-Young Leem]Byunggu Kim[Byunggu Kim]Iksoo Ji[Iksoo Ji]Dong-Yul Lee[Dong-Yul Lee]Chang-Lyoul Lee[Chang-Lyoul Lee]Jin Soo Kim[Jin Soo Kim]
Keywords
TIME-RESOLVED PHOTOLUMINESCENCE; ROOM-TEMPERATURE; GAN; LEDS
Issue Date
201304
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.8, pp.1160 - 1163
Abstract
InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with p-AlGaN electron blocking layers (EBLs) were grown by using metal-organic chemical vapor deposition. The effects of the EBL thickness on the electrical properties and the luminescent efficiency of the LEDs were investigated by using capacitance-voltage (C-V) measurements, current-voltage (I - V) measurements, electroluminescence (EL), and time-resolved photoluminescence (TR-PL). The EL efficiency of the LEDs increased with increasing thickness of the p-AlGaN EBL. In addition, the EL efficiency of the LEDs also increased with increasing injection current. The carrier lifetime of the LEDs increased with increasing thickness of the p-AlGaN EBL.
URI
http://hdl.handle.net/YU.REPOSITORY/26069http://dx.doi.org/10.3938/jkps.62.1160
ISSN
0374-4884
Appears in Collections:
이과대학 > 물리학과 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE