Optimization of Se layer thickness in Mo/CuGa/In/Se precursor for the formation of Cu(InGa)Se-2 by rapid thermal annealing

Title
Optimization of Se layer thickness in Mo/CuGa/In/Se precursor for the formation of Cu(InGa)Se-2 by rapid thermal annealing
Author(s)
구자석전소영오미솔조현일[조현일]손창길[손창길]김우경
Keywords
SOLAR MODULES
Issue Date
201305
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.535, pp.148 - 153
Abstract
Bilayer CuGa/In precursors were deposited on low-alkali, high-strain-point glass with a thickness of 1.8 mm by in-line DC-magnetron sputtering of CuGa (24 Ga wt%) and pure In targets. Se layers of different thicknesses, e.g., 1, 3, 5, and 8 mu m, were coated on the sputter-deposited glass/Mo/CuGa/In precursors with no external heating by evaporating Se in a high vacuum evaporator. Possible reaction pathways to Cu(InGa)Se-2 formation from glass/Mo/CuGa/In/(Se) precursors were suggested on the basis of the high-temperature X-ray diffraction analysis. It is also proposed that the high temperature ramp rates might be preferred for the improved Ga diffusion toward the sample surface and thus reduced phase separation between CuInSe2 and Cu(InGa)Se-2. In the rapid thermal process system used in this study, the Se thickness of 3 mu m demonstrated the best Ga incorporation during the selenization of 600 nm-thick CuGa/In precursors at 550-570 degrees C. (C) 2012 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25921http://dx.doi.org/10.1016/j.tsf.2012.11.082
ISSN
0040-6090
Appears in Collections:
중앙도서관 > rims journal
공과대학 > 화학공학부 > Articles
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