Characteristics ofMoSe(2) formation during rapid thermal processing ofMo-coated glass

Title
Characteristics ofMoSe(2) formation during rapid thermal processing ofMo-coated glass
Author(s)
이수빈구자석김삼미김수현천태훈[천태훈]오종석[오종석]김석진[김석진]김우경
Keywords
SOLAR-CELLS; CU(IN,GA)SE-2/MO INTERFACE; KINETICS; MOSE2
Issue Date
201305
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.535, pp.206 - 213
Abstract
Multi-layered Mo, prepared using an in-line sputtering system, was selenized by reaction with Se vapor and thermal annealing of bilayer Mo/Se samples. In situ high-temperature X-ray diffraction analysis indicated that the phase evolution of the glass/Mo/Se sample during heat treatment was similar to that of the selenization of glass/ Mo with Se vapor, except for crystallization of Se in the glass/Mo/Se sample. However, the MoSe2 layer formed from the selenization of the Mo layer by Se vapor preferentially grew perpendicularly to the Mo surface, whereas MoSe2 formed from the reaction of Mo with Se liquid showed random orientation. The detailed reaction pathways of the double-layer random-MoSe2/vertical-MoSe2 formation from the Mo/Se bilayer sample were suggested on the basis of the several characterization results including X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy and selected-area electron diffraction patterns. (C) 2012 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25914http://dx.doi.org/10.1016/j.tsf.2012.10.035
ISSN
0040-6090
Appears in Collections:
중앙도서관 > rims journal
공과대학 > 신소재공학부 > Articles
공과대학 > 화학공학부 > Articles
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