Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer

Title
Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer
Author(s)
김종수Jeongwoo Hwang[Jeongwoo Hwang]Kwanjae Lee[Kwanjae Lee]Jin Soo Kim[Jin Soo Kim]Cheul-Ro Lee[Cheul-Ro Lee]In-HwanLee[In-HwanLee]Kwangjae Lee[Kwangjae Lee]Jin Hong Lee[Jin Hong Lee]Jae-Young Leem[Jae-Young Leem]Jae-Hyun Ryou[Jae-Hyun Ryou]Russell D. Dupuis [Russell D. Dupuis ]
Keywords
MULTIPLE-QUANTUM WELLS; INDIUM CONTENT; LASER-DIODES; DEPENDENCE; GAIN
Issue Date
201305
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF CRYSTAL GROWTH, v.370, pp.109 - 113
Abstract
We report the influence of an InN layer inserted between InGaN and GaN on the optical properties of InGaN/GaN light emitting diode (LED). The emission wavelength of the InGaN/GaN LED with the InN layer was 459 nm at 10 K, which was red-shifted by 6 nm from that of the LED without the insertion layer (reference LED). The peak position of the reference LED subjected to thermal treatment at 825 degrees C was blue-shifted by 3.5 nm compared to that of the as-grown sample due to the structural variation of indium (In)-related features in InGaN/GaN quantum wells (QWs) and inter-diffusion of In and gallium (Ga) at the interface. However, the emission peak for the InGaN/GaN LED with the InN layer was red-shifted with increasing annealing temperatures. This result can be explained by the additional introduction of In to InGaN/GaN QWs and the reduction in the probability for Ga atoms at the GaN barrier to diffuse into InGaN through the InN layer. (C) 2012 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25892http://dx.doi.org/10.1016/j.jcrysgro.2012.08.049
ISSN
0022-0248
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이과대학 > 물리학과 > Articles
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