Crystallization of kesterite Cu2ZnSnS4 prepared by the sulfurization of sputtered Cu-Zn-Sn precursors

Title
Crystallization of kesterite Cu2ZnSnS4 prepared by the sulfurization of sputtered Cu-Zn-Sn precursors
Author(s)
김규호아말무하마드이크라술
Keywords
THIN-FILMS; GROWTH; SELENIZATION; FABRICATION; TARGET
Issue Date
201305
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.534, pp.144 - 148
Abstract
The one step deposition of a single layer of a Cu-Zn-Sn (CZT) precursor by radio frequency magnetron sputtering from an alloy target was performed to prepare kesterite Cu2ZnSnS4 thin film compound. The crystallization of Cu2ZnSnS4 after sulfurization at elevated temperatures was studied. Chemical reactions at 250 degrees C to 350 degrees C resulted in the formation of binary sulfides (CuS, SnS and ZnS), as well as a ternary sulfide (Cu2SnS3). Subsequently, the crystallization of kesterite Cu2ZnSnS4 was achieved from a reaction between ZnS and Cu2SnS3 at temperatures ranging from 400 to 550 degrees C. At 400 degrees C, Cu2ZnSnS4 was formed in the presence of secondary phases. These secondary phases disappeared gradually as the temperature was increased with a single Cu2ZnSnS4 phase observed at 500 degrees C and above. The optical properties of Cu2ZnSnS4 films were characterized and the direct energy band gap for Cu2ZnSnS4 films was estimated to be 1.51 eV. (C) 2013 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25870http://dx.doi.org/10.1016/j.tsf.2013.02.028
ISSN
0040-6090
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공과대학 > 신소재공학부 > Articles
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