Reaction mechanism for the ammonolysis of beta-gallium oxide to gallium nitride

Title
Reaction mechanism for the ammonolysis of beta-gallium oxide to gallium nitride
Author(s)
정우식
Keywords
MOLECULAR-BEAM EPITAXY; REDUCTION-NITRIDATION; GROWTH; GA2O3; GAN; HYDROGEN; AMMONIA; POWDERS; FLOW; CHEMISORPTION
Issue Date
201305
Publisher
CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI
Citation
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, v.121, no.1413, pp.460 - 463
Abstract
The reaction mechanism for the ammonolysis of beta-gallium oxide (beta-Ga2O3) to gallium nitride (GaN) was elucidated by observing the morphology of microsized beta-Ga2O3 single crystals with a distinct shape under a flow of ammonia (NH3) and hydrogen (H-2) at elevated temperatures. The morphology of the microsized beta-Ga2O3 single crystals grown on the c-plane sapphire by the thermal annealing of gallium sulfide, was not retained after calcination under a flow of NH3 and H-2. These microstructural observations strongly support that the ammonolysis of beta-Ga2O3 to GaN proceeds through gaseous Ga2O, and that the rate of the reduction of beta-Ga2O3 to Ga2O is slower than that of the nitridation of Ga2O to GaN. (C) 2013 The Ceramic Society of Japan. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25860http://dx.doi.org/10.2109/jcersj2.121.460
ISSN
1882-0743
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공과대학 > 화학공학부 > Articles
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