Phase evolution of CIGS alloyed compound synthesis by direct melting method

Title
Phase evolution of CIGS alloyed compound synthesis by direct melting method
Author(s)
백응률비타아스티니[비타아스티니]앤디틸타[앤디틸타]김보라[김보라]
Keywords
SOLAR-CELL; THIN-FILMS; CU(IN,GA)SE-2; NANOPARTICLES; ROUTE
Issue Date
201101
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.11, no.1, pp.S76 - S80
Abstract
The phase evolution of a CIGS alloyed compound synthesized by a direct melting method was investigated. The phase evolution and chemical composition were analyzed by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) measurements. Differential thermal and thermogravimetry analysis (DT/TGA) was performed on the mixed elements to clarify the types of reactions involved. A stoichiometric mixture of the element (purity: 99.99%) was sealed under vacuum in a quartz ampoule to prevent selenium loss. During heating at high temperatures, the elements reacted to form a compounds and a self mixing process occurred, to produce a stoichiometric composition. Selenium reacted preferentially with copper, indium and gallium to form CuSe, In(2)Se(3) and GaSe at low temperatures. As the temperature was increased, ternary CuInSe(2) and the initiation of quaternary CuGa(0.3)In(0.7)Se(2) began to form due to a reaction between binary phases with selenium. Upon heating to 1200 degrees C for 10 h a quaternary CIGS compound formed with a single-phase chalcopyrite structure and a (112) preferential orientation. (C) 2010 Elsevier B. V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25778http://dx.doi.org/10.1016/j.cap.2010.11.091
ISSN
1567-1739
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공과대학 > 신소재공학부 > Articles
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