Chemical bonding structures of silicon oxynitride films grown by ionised N-2 and pure O-2 gas mixtures at low temperature

Title
Chemical bonding structures of silicon oxynitride films grown by ionised N-2 and pure O-2 gas mixtures at low temperature
Author(s)
H. -J. Yun[H. -J. Yun]J. Lee[J. Lee]M. -C. Jung[M. -C. Jung]M. -S. Han[M. -S. Han]K. park[K. park]안광순최철종[최철종]
Keywords
NITROGEN INCORPORATION; VAPOR-DEPOSITION; THIN-FILMS; OXIDES; N2O; OXIDATION; SIO2; XPS
Issue Date
201101
Publisher
MANEY PUBLISHING
Citation
ADVANCES IN APPLIED CERAMICS, v.110, no.1, pp.25 - 29
Abstract
The ultrathin silicon oxynitride (SiOxNy) films were formed using the direct oxynitridation of Si using ionised N-2 and pure O-2 gas mixtures at the relatively low temperature (600 degrees C). The in situ X-ray photoelectron spectroscopy (XPS) was used to assess the chemical composition and chemical state of the SiOxNy films. N 1s XPS spectra reveals that at least three characteristic N bonding states such as N Si-3, N-(SiOx)(3) and N=Si-2-O bonds are formed in the SiOxNy films. As growth time increases, the N-(SiOx)(3) bond is dominant in SiOxNy films, although N Si-3 bonds are mainly formed in the initial growth stage at the temperature of 600 degrees C. As considering the absence of direct bonding between N and O atoms, the nitridation and oxidation processes are believed to proceed independently. The increase in the growth temperature leads to the breakdown of both N-(SiOx)(3) and N =Si-3 bonds and transformation into N=Si-2-O bonding structure.
URI
http://hdl.handle.net/YU.REPOSITORY/25734http://dx.doi.org/10.1179/174367510X12753884125442
ISSN
1743-6753
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공과대학 > 화학공학부 > Articles
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