Ga homogenization by simultaneous H2Se/H2S reaction of Cu-Ga-In precursor

Title
Ga homogenization by simultaneous H2Se/H2S reaction of Cu-Ga-In precursor
Author(s)
김우경G.M. Hanket[G.M. Hanket]W.N. Shafarman[W.N. Shafarman]
Issue Date
201101
Publisher
ELSEVIER SCIENCE BV
Citation
SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.95, no.1, pp.235 - 238
Abstract
The compositional distribution of Ga and S in Cu(InGa)(SeS)(2) films fabricated by a simultaneous selenization and sulfization process was systematically investigated. At low H2Se/H2S reaction temperature (490 degrees C), most Ga remains at the back of the film adjacent to the Mo back contact. However, the Ga/III ratios at the top and bottom of the Cu(InGa)(SeS)(2) layer monotonically increase and decrease with reaction temperatures, respectively. At T > 550 degrees C, homogeneous distribution of elemental Ga and In through film is achieved. Further increase of the reaction temperature (e.g., T > 550 degrees C) causes phase segregation on the surface of the Cu(InGa)(SeS)(2) film confirmed by XRD, GIXRD and EDS analysis. (C) 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25729http://dx.doi.org/10.1016/j.solmat.2010.04.050
ISSN
0927-0248
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공과대학 > 화학공학부 > Articles
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