광전류분광법에 의한 In_{(0.5)Ga_(1-x)Al_x)}_0.5P/GaAs 이중 이종접합 구조의 특성

Title
광전류분광법에 의한 In_{(0.5)Ga_(1-x)Al_x)}_0.5P/GaAs 이중 이종접합 구조의 특성
Other Titles
Characterization of In_{(0.5)Ga_(1-x)Al_x)}_0.5P/GaAs Double Heterostructures by Using Photocurrent Spectroscopy
Author(s)
배인호김종수김정화[김정화]김근형[김근형]이승준[이승준]
Keywords
In_{(0.5)Ga_(1-x)Al_x)}_0.5P/GaAs 이중 이종접합; 광전류; Varshni및 Bose-Einstein 방정식; In_{(0.5)Ga_(1-x)Al_x)}_0.5P/GaAs double heterostructures; Photocurrent(PC); Varshni and Bose-Einstein equations
Issue Date
201102
Publisher
한국물리학회
Citation
새물리, v.61, no.2, pp.170 - 174
Abstract
We have investigated the photocurrent (PC) of In_{(0.5)Ga_(1-x)Al_x)}_0.5P/GaAs double heterostructures grown by using metal-organic chemical vapor deposition (MOCVD). The PC measurements were studied as a function of the light intensity, temperature and external voltage(Vbias). At room temperature, we observed five different transitions, which were related to the band-gap energies for GaAs, In_(0.5)Ga_(0.5)P, In_(0.5)(Ga_(0.73)Al-(0.27)_0.5P,In_0.5{(Ga_(0.5)Al_(0.5)}_0.5P and In_(0.5){(Ga_(0.2)Al_(0.8)}_0.5P , respectively. The PC intensity increased with increasing light intensity, dc bias voltage and temperature. We also used both Varshni and Bose-Einstein type expressions temperature variation of the energy gaps. We found that the PC intensity with applied voltage was much larger for forward bias than for the reverse bias, which might be due to a reduction of the space charge width.
URI
http://hdl.handle.net/YU.REPOSITORY/25623
ISSN
0374-4914
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