Post-Annealing Effects on the Structural and the Optical Properties of ZnO Thin Films Grown by Using the Hydrothermal Method

Title
Post-Annealing Effects on the Structural and the Optical Properties of ZnO Thin Films Grown by Using the Hydrothermal Method
Author(s)
김종수김민수[김민수]임광국[임광국]조민영[조민영]임재영[임재영]이동율[이동율]김진수[김진수]손정식[손정식]
Keywords
TEMPERATURE; LAYERS; DEPENDENCE; MORPHOLOGY; MBE
Issue Date
201103
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.3, pp.515 - 519
Abstract
ZnO thin films were grown on Si (111) substrates by using the hydrothermal method. Before the ZnO thin films growth, ZnO seed-layers were grown on the Si substrates by using plasma-assisted molecular beam epitaxy (PA-MBE). Three ZnO diffraction peaks were observed and indicated a c-axis preferred orientation. With increasing annealing temperature up to 700 degrees C, the texture coefficient (TC) ratio of the c-axis to the a-axis and the residual stress increased. The near-band-edge emission (NBE) peak intensity gradually increased as the annealing temperature was increased up to 700 degrees C. At annealing temperatures above 800 degrees C, however, the deep-level emission (DLE) peak's position was red-shifted and its intensity was increased. Among the ZnO thin films, the ZnO thin films annealed at a temperature of 700 degrees C exhibited the largest improvement in the luminescent efficiency.
URI
http://hdl.handle.net/YU.REPOSITORY/25578http://dx.doi.org/10.3938/jkps.58.515
ISSN
0374-4884
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이과대학 > 물리학과 > Articles
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