Ambipolar thin-film transistors and an inverter based on pentacene/self-assembled monolayer modified ZnO hybrid structures for balanced hole and electron mobilities

Title
Ambipolar thin-film transistors and an inverter based on pentacene/self-assembled monolayer modified ZnO hybrid structures for balanced hole and electron mobilities
Author(s)
김세현Yang, Chanwoo[Yang, Chanwoo]Kwack, Youngjin[Kwack, Youngjin]Park, Mijeong[Park, Mijeong]An, Tae Kyu[An, Tae Kyu]Hong, Kipyo[Hong, Kipyo]Nam, Sooji[Nam, Sooji]Choi, Woon-Seop[Choi, Woon-Seop]Park, Chan Eon[Park, Chan Eon]
Keywords
FIELD-EFFECT TRANSISTORS; DIELECTRIC ROUGHNESS; PERFORMANCE; TRANSPORT; SURFACE; FUNCTIONALIZATION; SEMICONDUCTORS; FABRICATION; MORPHOLOGY; DEVICES
Issue Date
201103
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v.12, no.3, pp.411 - 418
Abstract
We have fabricated high performance ambipolar thin-film transistors (TFTs) and an inverter based on organic-inorganic bilayer structures composed of an upper pentacene layer and a lower atomic-layer-deposited zinc oxide (ZnO) layer. The insertion of a dodecanoic acid (DA) self-assembled monolayer (SAM) into the interface between pentacene and ZnO results in an improvement in the morphology of the pentacene layer and in well-balanced ambipolarity with hole and electron mobilities of 0.34 and 0.38 cm(2)V (1)s (1), respectively. The ambipolar TFTs with DA-treated ZnO exhibit a hole to electron mobility ratio of approximately 0.90, which is higher by a factor of similar to 2.8 than that of ambipolar TFTs with untreated ZnO. We also tested the introduction of a perfluorooctyltriethoxysilane (PFOTES) SAM; the effects of the permanent dipole fields of the SAMs on the electrical and ambipolar characteristics of the hybrid TFTs were investigated. (C) 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25573http://dx.doi.org/10.1016/j.orgel.2010.12.008
ISSN
1566-1199
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공과대학 > 화학공학부 > Articles
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