Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO) transparent thin films deposited by pulsed laser deposition process

Title
Properties of multilayer gallium and aluminum doped ZnO(GZO/AZO) transparent thin films deposited by pulsed laser deposition process
Author(s)
이재열신진현[신진현]신동균[신동균]이희영
Keywords
ZINC-OXIDE FILMS; ROOM-TEMPERATURE; ZNO FILMS; GROWTH; DEVICE
Issue Date
201103
Publisher
ELSEVIER SCIENCE BV
Citation
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, v.21, pp.S96 - S99
Abstract
Multilayer gallium and aluminum doped ZnO (GZO/AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide(GZO) and Al-doped zinc oxide(AZO) thin film by using pulsed laser deposition(PLD) process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO (1:1) thin film deposited at 400 degrees C shows the electrical resistivity of 4.18x10(-4) Omega.cm, an electron concentration of 7.5x10(20)/cm(3), and carrier mobility of 25.4 cm(2)/(V.s). The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the Al ratio.
URI
http://hdl.handle.net/YU.REPOSITORY/25541
ISSN
1003-6326
Appears in Collections:
공과대학 > 신소재공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE