Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors

Title
Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors
Author(s)
김세현Yang, Shinhyuk[Yang, Shinhyuk]Hwang, Chi-Sun[Hwang, Chi-Sun]Lee, Jeong-Ik[Lee, Jeong-Ik]Yoon, Sung-Min[Yoon, Sung-Min]Ryu, Min-Ki[Ryu, Min-Ki]Cho, Kyoung-Ik[Cho, Kyoung-Ik]Park, Chan-Eon[Park, Chan-Eon]Jang, Jin[Jang, Jin]Park, Sang-Hee Ko[Park, Sang-Hee Ko]
Keywords
LIGHT-EMITTING-DIODE; TEMPERATURE; FABRICATION
Issue Date
201103
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.98, no.10
Abstract
We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04 cm(2)/V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0 x 10(9) at a maximum processing temperature of 200 degrees C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator. (C) 2011 American Institute of Physics. [doi:10.1063/1.3551536]
URI
http://hdl.handle.net/YU.REPOSITORY/25530http://dx.doi.org/10.1063/1.3551536
ISSN
0003-6951
Appears in Collections:
공과대학 > 화학공학부 > Articles
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