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dc.contributor.author김수현ko
dc.contributor.author이도중[이도중]ko
dc.contributor.author권장연[권장연]ko
dc.contributor.author김현미[김현미]ko
dc.contributor.author김기범[김기범]ko
dc.date.accessioned2015-12-17T01:32:05Z-
dc.date.available2015-12-17T01:32:05Z-
dc.date.created2015-11-13-
dc.date.issued201103-
dc.identifier.citationJOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.5, pp.D277 - D281-
dc.identifier.issn0013-4651-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/25527-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3568881-
dc.description.abstractThe effect of the Al distribution on the electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) is investigated. In order to control the Al distribution, the pulsing time of trimethylaluminum (TMA) is varied from 2 (within an ALD window) to 0.1 s. As a result, the areal density of Al atoms incorporated in a single dopant layer decreases from 3.3 x 10(14) to 1.2 x 10(14) cm(-2). Hall measurements reveal that the minimum resistivity of the ALD-AZO films is decreased from 3.2 x 10(-3) to 1.7 x10(-3) Omega cm as a result of reducing the TMA pulsing time from 2 to 0.1 s. This decrease is due to the obvious increase of the carrier concentration from 1.4 x 10(20) to 4.7 x 10(20) cm(-3). It is suggested that both the improved doping efficiency (from 13 to 58%) and the insertion of more dopant layers within the ZnO matrix are responsible for the increase of the carrier concentration. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3568881] All rights reserved.-
dc.language영어-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectOXIDE THIN-FILMS-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectGROWTH-
dc.subjectEPITAXY-
dc.titleEffect of Al Distribution on Carrier Generation of Atomic Layer Deposited Al-Doped ZnO Films-
dc.typeArticle-
dc.identifier.wosid000288867700060-
dc.identifier.scopusid2-s2.0-79953182343-
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