Effect of Al Distribution on Carrier Generation of Atomic Layer Deposited Al-Doped ZnO Films

Title
Effect of Al Distribution on Carrier Generation of Atomic Layer Deposited Al-Doped ZnO Films
Author(s)
김수현이도중[이도중]권장연[권장연]김현미[김현미]김기범[김기범]
Keywords
OXIDE THIN-FILMS; ELECTRICAL-PROPERTIES; GROWTH; EPITAXY
Issue Date
201103
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.5, pp.D277 - D281
Abstract
The effect of the Al distribution on the electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) is investigated. In order to control the Al distribution, the pulsing time of trimethylaluminum (TMA) is varied from 2 (within an ALD window) to 0.1 s. As a result, the areal density of Al atoms incorporated in a single dopant layer decreases from 3.3 x 10(14) to 1.2 x 10(14) cm(-2). Hall measurements reveal that the minimum resistivity of the ALD-AZO films is decreased from 3.2 x 10(-3) to 1.7 x10(-3) Omega cm as a result of reducing the TMA pulsing time from 2 to 0.1 s. This decrease is due to the obvious increase of the carrier concentration from 1.4 x 10(20) to 4.7 x 10(20) cm(-3). It is suggested that both the improved doping efficiency (from 13 to 58%) and the insertion of more dopant layers within the ZnO matrix are responsible for the increase of the carrier concentration. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3568881] All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25527http://dx.doi.org/10.1149/1.3568881
ISSN
0013-4651
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공과대학 > 신소재공학부 > Articles
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