Photoluminescence Studies of Porous ZnO Nanorods

Title
Photoluminescence Studies of Porous ZnO Nanorods
Author(s)
김종수Min Su Kim[Min Su Kim]Kwang Gug Yim[Kwang Gug Yim]Su Min Jeon[Su Min Jeon]Dong-Yul Lee[Dong-Yul Lee]Jin Soo Kim[Jin Soo Kim]Jeong-Sik Son[Jeong-Sik Son]Jae-Young Leem[Jae-Young Leem]
Keywords
CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; OPTICAL-PROPERTIES; TEMPERATURE; GROWTH; ULTRAVIOLET; EMISSION; LAYERS; RECOMBINATION; FABRICATION
Issue Date
201103
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.3
Abstract
Porous ZnO nanorods were prepared by thermal annealing at 700 degrees C in argon atmosphere. Temperature-dependent photoluminescence (PL) was carried out to investigate the optical properties of the porous ZnO nanorods. The average diameter and density of the pores formed on the surface of the porous ZnO nanorods are 25 nm and 1.2 x 10(10) cm(-2), respectively. Six peaks at 3.380, 3.366, 3.338, 3.267, 3.227, and 3.198 eV, corresponding to free exciton (FX), neutral donor bound exciton ((DX)-X-0), first-order longitudinal optical phonon replica of free exciton (FX-1LO), FX-2LO, FX-3LO, and FX-4LO emissions, are obtained at low temperature (10 K). The FX emission peak energy of the porous ZnO nanorods exhibits an anomalous behavior as the temperature is increased to 100 K. The activation energy of the porous ZnO nanorods is found to be about 8.6 meV, and the values of fitting parameters to Varshni's empirical equation are alpha = 6 x 10(-4) eV/K and beta = 680 K. (C) 2011 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/25526http://dx.doi.org/10.1143/JJAP.50.035003
ISSN
0021-4922
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이과대학 > 물리학과 > Articles
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