Atomic Layer Deposition of RuAlO Thin Films as a Diffusion Barrier for Seedless Cu Interconnects

Title
Atomic Layer Deposition of RuAlO Thin Films as a Diffusion Barrier for Seedless Cu Interconnects
Author(s)
김수현천태훈[천태훈]최상혁[최상혁]강대환[강대환]
Keywords
COPPER METALLIZATION; RUTHENIUM; RU; ELECTRODEPOSITION; IMPROVEMENT
Issue Date
201103
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.5, pp.D57 - D61
Abstract
Ruthenium (Ru)-based ternary thin films (RuAlO) were prepared by thermal atomic layer deposition (ALD) with repeated super-cycles consisting of Ru and Al(2)O(3) ALD sub-cycles at 225 degrees C. The step coverage of ALD-RuAlO was excellent, around 93% at contact holes with an aspect ratio of similar to 29 (top-opening diameter: similar to 74 nm). Transmission electron microscopy analysis showed that RuAlO films formed with non-columnar grains and a nano-crystalline microstructure consisting of Ru nano-crystals separated by amorphous Al(2)O(3). The sheet resistance and X-ray diffraction showed that the structure of Cu (100 nm)/RuAlO (15 nm)/Si was stable after annealing at 650 degrees C for 30 min. Fifty nanometer-thick Cu was electrodeposited directly on RuAlO film, suggesting that it could be a viable candidate as a Cu direct plateable diffusion barrier. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3556980] All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25521http://dx.doi.org/10.1149/1.3556980
ISSN
1099-0062
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공과대학 > 신소재공학부 > Articles
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