Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

Title
Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors
Author(s)
김세현Hong, Kipyo[Hong, Kipyo]Yang, Chanwoo[Yang, Chanwoo]An, Tae Kyu[An, Tae Kyu]Cha, Hyojung[Cha, Hyojung]Park, Chanjun[Park, Chanjun]Park, Chan Eon[Park, Chan Eon]
Keywords
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; POLY(3,4-ETHYLENEDIOXYTHIOPHENE); PENTACENE; INTERFACES
Issue Date
201103
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v.12, no.3, pp.516 - 519
Abstract
We demonstrate the use of n-type N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4-ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). Due to the low work function of this material, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold. The low injection barrier reduced the contact resistance, yielding a high field effect mobility in transistors based on PEDOT:Tos (0.145 cm(2)/Vs); the field effect mobility was 16 times higher than that in transistors based on gold (0.009 cm(2)/Vs). (C) 2011 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25509http://dx.doi.org/10.1016/j.orgel.2010.12.022
ISSN
1566-1199
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공과대학 > 화학공학부 > Articles
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