Plasma-Enhanced Atomic Layer Deposition of TaCx Films Using Tris(neopentyl) Tantalum Dichloride and H-2 Plasma

Title
Plasma-Enhanced Atomic Layer Deposition of TaCx Films Using Tris(neopentyl) Tantalum Dichloride and H-2 Plasma
Author(s)
김수현김태호엄태광강대환[강대환]김훈[김훈]유상호[유상호]임진묵[임진묵]
Keywords
TAN THIN-FILMS; DIFFUSION BARRIER; DIETHYLAMIDO-TANTALUM; CU; MECHANISM; SILICON; GROWTH; COPPER
Issue Date
201105
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.8, pp.D89 - D93
Abstract
TaCx films were deposited by plasma-enhanced atomic layer deposition (PEALD) at a wafer temperature of 300 degrees C using a novel nitrogen-free Ta precursor, tris(neopentyl) tantalum dichloride, Ta[CH2C(CH3)(3)](3)Cl-2 and H-2 plasma as the reactant. Self-limiting film growth was observed with both the precursor and reactant pulsing time. Both X-ray diffraction and electron diffraction analysis consistently showed that a cubic TaC phase formed, even though the film was Ta-rich TaCx (C/Ta = similar to 0.36). The film resistivity decreased with increasing H-2 plasma pulsing time from 900 to 375 mu Omega cm. In this study, a performance of TaCx as a diffusion barrier for Cu interconnects was evaluated. The results showed that the structure of Cu (100 nm)/ALD-TaCx (15 nm)/Si was stable after annealing at 650 degrees C for 30 min. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594747] All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/25254http://dx.doi.org/10.1149/1.3594747
ISSN
1099-0062
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공과대학 > 신소재공학부 > Articles
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