Ru/WNx Bilayers as Diffusion Barriers for Cu Interconnects

Title
Ru/WNx Bilayers as Diffusion Barriers for Cu Interconnects
Author(s)
김수현윈두사리엄태광최상혁
Keywords
RUTHENIUM THIN-FILM; COPPER; RU; ELECTRODEPOSITION; METALLIZATION; PERFORMANCE; IMPROVEMENT; WNX; TA
Issue Date
201105
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.5
Abstract
Bilayers of Ru (7 nm)/WNx (8 nm) prepared by sputtering were investigated as diffusion barriers between Cu and Si, and their performances were compared as a function of N-2 flow rate during the deposition of WNx. The Ru/WNx bilayer diffusion barriers were stable upon annealing at up to at least 650 degrees C for 30 min while a Ru single layer (15nm in thickness) failed after annealing at 450 degrees C owing to the formation of Cu silicide. Grazing-angle X-ray diffractometry results showed that the crystallinity of the WNx film was degraded but that its nanocrystalline state preserved upon annealing at higher temperatures with increasing N-2 flow rate during the deposition. These resulted in the better performance against Cu attack of bilayer diffusion barriers with the WNx film prepared with a higher N-2 flow rate. (C) 2011 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/25240http://dx.doi.org/10.1143/JJAP.50.05EA08
ISSN
0021-4922
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공과대학 > 신소재공학부 > Articles
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