Improved Light Extraction Efficiency of InGaN-Based Multi-Quantum Well Light Emitting Diodes by Using a Single Die Growth

Title
Improved Light Extraction Efficiency of InGaN-Based Multi-Quantum Well Light Emitting Diodes by Using a Single Die Growth
Author(s)
박시현박민주[박민주]권광우[권광우]김영호[김영호]곽준섭[곽준섭]
Keywords
EXTERNAL QUANTUM EFFICIENCY; GAN; SUBSTRATE; ULTRAVIOLET
Issue Date
201105
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.5, pp.4484 - 4487
Abstract
We have demonstrated that the light extraction efficiency of the InGaN based multi-quantum well light-emitting diodes (LEDs) can be improved by using a single die growth (SDG) method. The SDG was performed by patterning the n-GaN and sapphire substrate with a size of single chip (600 x 250 mu m(2)) by using a laser scriber, followed by the regrowth of the n-GaN and LED structures on the laser patterned n-GaN. We fabricated lateral LED chips having the SDG structures (SDG-LEDs), in which the thickness of the regrown n-GaN was varied from 2 to 6 mu m. For comparison, we also fabricated conventional LED chips without the SDG structures. The SDG-LEDs showed lower operating voltage when compared to the conventional LEDs. In addition, the output power of the SDG-LEDs was significantly higher than that of the conventional LEDs. From optical ray tracing simulations, the increase in the thickness and sidewall angle of the regrown n-GaN and LED structures may enhance photon escapes from the tilted facets of the regrown n-GaN, followed by the increase in light output power and extraction efficiency of the SDG-LEDs.
URI
http://hdl.handle.net/YU.REPOSITORY/25226http://dx.doi.org/10.1166/jnn.2011.3703
ISSN
1533-4880
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공과대학 > 전자공학과 > Articles
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