Transparent Zn-Doped In2O3 Electrode Prepared by Radio Frequency Facing Target Sputtering for Flexible Dye-Sensitized Solar Cells

Title
Transparent Zn-Doped In2O3 Electrode Prepared by Radio Frequency Facing Target Sputtering for Flexible Dye-Sensitized Solar Cells
Author(s)
최영철[최영철]신한재[신한재]한동철[한동철]안광순김재홍이도경[이도경]
Keywords
ELECTRICAL-PROPERTIES; ROOM-TEMPERATURE; INDIUM-OXIDE; FILMS; ITO; SUBSTRATE; DC; LAYER
Issue Date
201105
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.538, pp.127 - 135
Abstract
For the application to transparent electrode in flexible dye-sensitized solar cells (DSSCs), Zn-doped In2O3 (In2O3:Zn) thin films have been fabricated on polyethylene naphthalate (PEN) substrate by the radio frequency facing target sputtering method, and their characteristics have been investigated as a function of deposition pressure. X-ray diffraction study reveal that the structure of In2O3:Zn thin films is amorphous nature. The film morphology is slightly sensitive to the deposition pressure. At the sputtering pressure of 0.40 Pa, In2O3:Zn thin film on PEN exhibits a sheet resistance of about 12.4 Omega/square and average transmittance of about 85% at 550 nm wavelength, resulting in the highest value for figure of merit. The flexible DSSC device with the In2O3:Zn electrode shows the efficient solar-to-electrical power conversion efficiency (eta), which is the maximum eta value of 4.6% under simulated air mass 1.5 irradiation (100mW/cm(2)).
URI
http://hdl.handle.net/YU.REPOSITORY/25208http://dx.doi.org/10.1080/15421406.2011.563681
ISSN
1542-1406
Appears in Collections:
공과대학 > 화학공학부 > Articles
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