THz Generation Characteristics of Low-temperature-grown InGaAs Emitters

Title
THz Generation Characteristics of Low-temperature-grown InGaAs Emitters
Author(s)
김종수J. O. Kim[J. O. Kim]S. J. Lee[S. J. Lee]D. S. Yee[D. S. Yee]S. K. Noh[S. K. Noh]J. H. Shin[J. H. Shin]K. H. Park[K. H. Park]C. Kang[C. Kang]C.-S. Kee[C.-S. Kee]D. W. Park[D. W. Park]J. S. Kim[J. S. Kim]
Keywords
TERAHERTZ RADIATION; LASER; EMISSION; PULSES
Issue Date
201105
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1334 - 1338
Abstract
Low-temperature grown (LTG) In GaAs emitters were prepared on semi-insulating InP substrates for investigating terahertz (THz) generation. The characteristics were first examined by using femtosecond (fs) laser excitation. and LTG InGaAs was applied to the emitter of the THz photomixer. The THz photocurrent generated by the fs-pulse laser had a peak at around 0.2 THz, which exponentially decayed with increasing frequency. The cw THz output power of the photomixer showed quadratic changes that increased with bias voltage and decreased with beat frequency.
URI
http://hdl.handle.net/YU.REPOSITORY/25198http://dx.doi.org/10.3938/jkps.58.1334
ISSN
0374-4884
Appears in Collections:
이과대학 > 물리학과 > Articles
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