Phase separation in Ga and N co-incorporated ZnO films and its effects on photo-response in photoelectrochemical water splitting

Title
Phase separation in Ga and N co-incorporated ZnO films and its effects on photo-response in photoelectrochemical water splitting
Author(s)
Sudhakar Shet[Sudhakar Shet]안광순R. Nuggehalli[R. Nuggehalli]Y. Yan[Y. Yan]J. Turner[J. Turner]M. Al-Jassim [M. Al-Jassim ]
Keywords
TITANIUM-DIOXIDE; ELECTRODES; HYDROGEN; CELLS; PHOTOCATALYSIS
Issue Date
201107
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.519, no.18, pp.5983 - 5987
Abstract
Ga and N co-incorporated ZnO thin films [ZnO:(Ga:N)] with reduced bandgaps were deposited by co-sputtering at different N(2) gas flow rate in mixed N(2) and O(2) ambient at room temperature followed by postannealing at 500 degrees C in air for 2 h. We found that all of the ZnO:(Ga:N) films exhibited enhanced crystallinity which can suppress the recombination rate between the photogenerated electrons and holes. However, phase segregation of Zn(3)N(2) occurred in ZnO:(Ga:N) thin films in nitrogen-rich sputtering ambient. We found that ZnO:(Ga:N) thin films without phase separation of Zn(3)N(2) exhibited much better photoelectrochemical (PEC) response, due to the reduced bandgap and better crystallinity. Our results suggest that growth conditions must be controlled carefully to avoid phase separation in Ga and N co-incorporated ZnO thin films to improve PEC response. (C) 2011 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/24920http://dx.doi.org/10.1016/j.tsf.2011.03.050
ISSN
0040-6090
Appears in Collections:
공과대학 > 화학공학부 > Articles
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