High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask

Title
High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask
Author(s)
조주영[조주영]권민기[권민기]박일규홍상현[홍상현]김재준[김재준]박성은[박성은]김성태[김성태]박성주[박성주]
Keywords
VAPOR-PHASE EPITAXY; QUANTUM-WELLS
Issue Date
201107
Publisher
OPTICAL SOC AMER
Citation
OPTICS EXPRESS, v.19, no.14, pp.A943 - A948
Abstract
We report high-efficiency blue light-emitting diodes (LEDs) with air voids embedded in GaN. The air void structures were created by the lateral epitaxial overgrowth (LEO) of GaN using a tungsten mask. The optical output power was increased by 60% at an injection current of 20 mA compared with that of conventional LEDs without air voids. The enhancement is attributed to improved internal quantum efficiency because the air voids reduce the threading dislocation and strain in the LEO GaN epilayer. A ray-tracing simulation revealed that the path length of light escaping from the LED with air voids is much shorter because the air voids efficiently change the light path toward the top direction to improve the light extraction of the LED. (C) 2011 Optical Society of America
URI
http://hdl.handle.net/YU.REPOSITORY/24917http://dx.doi.org/10.1364/OE.19.00A943
ISSN
1094-4087
Appears in Collections:
공과대학 > 전자공학과 > Articles
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