Measurement of III-V Compound Semiconductor Characteristics using the Contact less Electroreflectance Method

Title
Measurement of III-V Compound Semiconductor Characteristics using the Contact less Electroreflectance Method
Author(s)
최순돈유재인장호경[장호경]
Keywords
QUANTUM DOTS; ISLANDS; GROWTH; GAAS
Issue Date
201107
Publisher
KOREAN INST ELECTR ENG
Citation
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.6, no.4, pp.535 - 538
Abstract
The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs self-assembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of InAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.
URI
http://hdl.handle.net/YU.REPOSITORY/24909http://dx.doi.org/10.5370/JEET.2011.6.4.535
ISSN
1975-0102
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공과대학 > 신소재공학부 > Articles
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