Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature

Title
Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature
Author(s)
이동연심재술김태성[김태성]박재홍[박재홍]
Keywords
PZT THICK-FILM; ELECTRICAL-PROPERTIES; SENSITIVITY; FABRICATION; SILICON; CANTILEVER; ELECTRODES; DEPOSITION; BEHAVIOR; ACTUATOR
Issue Date
201107
Publisher
INST ENGINEERING TECHNOLOGY-IET
Citation
MICRO & NANO LETTERS, v.6, no.7, pp.553 - 558
Abstract
Pb(Zr(0.52)Ti(0.48))O(3) (PZT) thick film-based micro-transducers demonstrate excellent piezoelectric performances. However, its powder-based film requires very high sintering temperature to obtain high density and good electromechanical properties of the active film. High processing temperature enables inter-diffusion or reaction between PZT active materials and Si-based substrate to result in device failure via volatilisation of PbO especially over 800 degrees C. Therefore the preventive solution to this problem should be considered in fabricating silicon-based piezoelectric microdevices for the better performance. In this research, compatibility in the interface stability and adhesion between the layers of the overall integrated piezoelectric thick-film devices were thoroughly investigated for the successful application of the process at high temperature. The Pt (or PtO(x))/TiO(2)/SiN(x)/Si substrate represented the best interfacial properties among various combinations of structural substrates, so this structure is highly recommended to integrated piezoelectric thick-film microelectromechanical system devices.
URI
http://hdl.handle.net/YU.REPOSITORY/24862http://dx.doi.org/10.1049/mnl.2011.0049
ISSN
1750-0443
Appears in Collections:
공과대학 > 기계공학부 > Articles
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