Effect of precursor structure on Cu(InGa)Se-2 formation by reactive annealing

Title
Effect of precursor structure on Cu(InGa)Se-2 formation by reactive annealing
Author(s)
박현욱[박현욱]김성철[김성철]이상환[이상환]구자석[구자석]이성호[이성호]전찬욱윤석현[윤석현]김우경
Keywords
SOLAR-CELLS; MOSE2 LAYER
Issue Date
201108
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.519, no.21, pp.7245 - 7249
Abstract
Precursor structures of Mo/CuGa/In, Mo/In/CuGa, Mo/In/CuGa/In and Mo/CuGaIn were prepared on thin sodium-free glass by the sputtering of CuGa and In targets. In-situ phase evolution of precursors with temperature was investigated by a high-temperature X-ray diffraction system, which verified the existence and transformation of several intermetallics: Cu2In, Cu11In9, Cu3Ga, Cu7In3, Cu9Ga4 and Cu16In9 as well as elemental In. MoSe2 layers produced during selenization were detected by scanning electron microscope and X-ray diffraction, with their thicknesses varying by precursor structure. Adhesion strength of Cu(InGa)Se-2 to each Mo layer was assessed by applying CdS chemical bath deposition process to each sample. (C) 2011 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/24811http://dx.doi.org/10.1016/j.tsf.2010.12.220
ISSN
0040-6090
Appears in Collections:
공과대학 > 화학공학부 > Articles
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