Structures and Properties of Oriented IZO Transparent Conducting Thin Films Deposited on AZO Buffer Layers by Pulsed Laser Deposition

Title
Structures and Properties of Oriented IZO Transparent Conducting Thin Films Deposited on AZO Buffer Layers by Pulsed Laser Deposition
Author(s)
이재열이희영신진현[신진현]신동균[신동균]
Keywords
ZINC-OXIDE FILMS; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; ZNO FILMS; DOPED ZNO; ITO
Issue Date
201108
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.6, no.3, pp.375 - 378
Abstract
The electrical and optical properties of Zn-doped In2O3 (IZO) thin films depend on the deposition process, oxygen partial pressure, substrate temperature, and crystallinity of the thin films. In this study, IZO transparent conducting oxide thin films with a highly < 111 > preferred orientation were fabricated by pulsed laser deposition (PLD) on AZO buffer layers, as a function of the substrate temperature. The crystal structures of the oriented IZO thin films were analyzed, along with their electrical and optical properties, by X-ray diffraction, field emission scanning electron microscopy, Hall measurement system, and ultraviolet-visible spectrometry. Highly oriented IZO/AZO thin films with an electrical resistivity of 6.0 x 10(-4) ohm cm and an optical transmittance of over 85% were fabricated under optimum-processing-parameter conditions.
URI
http://hdl.handle.net/YU.REPOSITORY/24808http://dx.doi.org/10.1166/jno.2011.1188
ISSN
1555-130X
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공과대학 > 신소재공학부 > Articles
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