Transparent Conductive Indium Zinc Tin Oxide Thin Films for Solar Cell Applications

Title
Transparent Conductive Indium Zinc Tin Oxide Thin Films for Solar Cell Applications
Author(s)
이희영다미시[다미시]마홍찬[마홍찬]윤동진[윤동진]김정주[김정주]
Keywords
ELECTRICAL-PROPERTIES; MICROSTRUCTURE; TEMPERATURE; SUBSTRATE; SYSTEM
Issue Date
201108
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.6, no.3, pp.223 - 229
Abstract
Indium zinc tin oxide (IZTO) thin films, with nominal composition corresponding to In0.6Zn0.2Sn0.2O1.5 (IZTO20), were deposited onto alkali-free glass substrate by RF magnetron sputtering. The effects of deposition parameters such as RF power, working pressure, deposition time, and substrate temperature on the structural, electrical and optical properties were investigated from the viewpoint of obtaining the films with low electrical resistivity and high optical transparency across the visible spectrum. After deposition, the films were annealed in Ar/H-2 forming gas with a ratio of 95%/5% at the temperature of 300 degrees C and 400 degrees C for 30 minutes. Film properties were characterized using four point probe, X-ray diffractometer, UV-VIS spectrometer, Hall effect measurement system, atomic force microscope and field emission scanning electron microscope. The minimum resistivity value of 5.4 x 10(-4) ohm.cm was obtained from the film deposited at 5 mTorr and 400 degrees C with an RF power of 125 W and annealed at 400 degrees C in forming gas. The average transmittance in the visible spectrum was kept fairly constant over 80%. IZTO20 thin film have thus shown its potential toward indium-saving transparent conductive oxides, which could make it possible to replace more expensive ITO and IZO thin films in solar cell applications.
URI
http://hdl.handle.net/YU.REPOSITORY/24778
ISSN
1555-130X
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공과대학 > 신소재공학부 > Articles
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