Synthesis of Si Nanowires by Using Atmospheric Pressure Chemical Vapor Deposition with SiCl4

Title
Synthesis of Si Nanowires by Using Atmospheric Pressure Chemical Vapor Deposition with SiCl4
Author(s)
김수현천태훈최태진[최태진]김형준[김형준]김도영[김도영]
Keywords
SILICON-NANOWIRES; OPTICAL-PROPERTIES; RAMAN-SPECTRUM; GROWTH; CATALYSTS
Issue Date
201108
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.2, pp.485 - 488
Abstract
Silicon nanowires were synthesized by using a vapor-liquid-solid method and atmospheric pressure chemical vapor deposition with silicon tetrachloride as the Si source. A thin Au film (1-nm thick) deposited on a Si substrate was used as a catalyst, and Au nanodots were formed subsequently by using a high-temperature chemical vapor deposition process. Small-diameter Si nanowires (similar to 15 nm) with a thin amorphous oxide sheath (2 3 nm) were densely grown under the condition of abundant H-2 gas and proper N-2 carrier gas flow into the hot-wall chamber. The high crystallinity of the Si nanowires was verified by using high-resolution transmission electron microscopy, selected area electron diffraction, and Raman spectroscopy.
URI
http://hdl.handle.net/YU.REPOSITORY/24777http://dx.doi.org/10.3938/jkps.59.485
ISSN
0374-4884
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공과대학 > 신소재공학부 > Articles
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