Nanocrystalline ZnO Thin Films Grown on Porous Silicon by Sol-gel Method and Effects of Post-annealing

Title
Nanocrystalline ZnO Thin Films Grown on Porous Silicon by Sol-gel Method and Effects of Post-annealing
Author(s)
김종수Min Su Kim[Min Su Kim]Kwang Gug Yim[Kwang Gug Yim]jae-Young Leem[jae-Young Leem]Soaram Kim[Soaram Kim]Giwoong Nam[Giwoong Nam]Do Yeob Kim[Do Yeob Kim]Sung-O Kim[Sung-O Kim]Dong-Yul Lee[Dong-Yul Lee]Jin Soo Kim[Jin Soo Kim]
Keywords
LIGHT-EMITTING DIODE; OPTICAL-PROPERTIES; ZNO/POROUS SILICON; FIELD-EMISSION; QUANTUM DOTS; PHOTOLUMINESCENCE; NANORODS; FABRICATION; PHOTODETECTORS; TEMPERATURE
Issue Date
201108
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.2, pp.346 - 352
Abstract
Nanocrystalline ZnO thin Wins were grown on porous silicon (PS) by sol-gel spin-coating met hod. Atomic force microscopy (AFM), X-ray diffraction (XRD). Raman, and photoluminescence (PL) were carried out to investigate the structural and the optical properties of ZnO thin films on PS. The surface morphology of the ZnO thin films on PS exhibits an island structure. Nanosized craters were formed on the surfaces of the ZnO thin films by the post-annealing. lit comparison with the ZnO thin films on Si, a higher and a narrower (002) diffraction peak was observed front the ZnO thin films on PS, and their residual stress was relaxed. By the post-annealing, the crystallinity of the ZnO thin films on PS was further enhanced, and the residual stress was further relaxed. A white light luminescence wit h blue, green, and red emission peaks was observed from the ZnO thin films on PS. and the intensities or the emission peaks became uniform with post-annealing.
URI
http://hdl.handle.net/YU.REPOSITORY/24754http://dx.doi.org/10.3938/jkps.59.346
ISSN
0374-4884
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이과대학 > 물리학과 > Articles
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