Microstructural Evolution and Electrical Characteristics of Er-germanides Formed on Ge Substrate

Title
Microstructural Evolution and Electrical Characteristics of Er-germanides Formed on Ge Substrate
Author(s)
V. Janardhanam[V. Janardhanam]문경원[문경원]김진성[김진성]이민수[이민수]안광순최철종[최철종]
Keywords
SILICIDE THIN-FILMS; ERBIUM SILICIDE; YTTRIUM SILICIDE; GE(001); MORPHOLOGY; THICKNESS; TEXTURE; GROWTH; NIGE
Issue Date
201108
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.8, pp.H751 - H755
Abstract
The microstructural and electrical properties of Er-germanides formed by a solid state reaction between Er and Ge have been investigated at different germanide formation temperatures from 400 to 700 degrees C. Er(26)Ge(23) and Er(3)Ge(4) phases were formed at a germanidation temperature of 400 degrees C, followed by the formation of Er(3)Ge(4) and Er(2)Ge(3) at 500 to 600 degrees C and then ErGe(2.16) at 700 degrees C. The sheet resistance gradually decreased with increasing annealing temperature up to 600 degrees C, which could be associated with the phase transformation from Er-rich to Ge-rich Er-germanides. Er-germanides on n-type Ge showed Schottky behavior at low formation temperatures of less than 600 degrees C. Above 600 degrees C they exhibit Ohmic behavior. However, due to strong Fermi level pinning, Er-germanide contact to p-type Ge substrates was demonstrated to be Ohmic regardless of the annealing temperatures. The conversion of Schottky to Ohmic behavior could be attributed to a significant increase in current in the forward and reverse biases caused by the formation of square-shaped microvoids driven by Ge out-diffusion near the interface between germanides and the Ge substrate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594746] All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/24747http://dx.doi.org/10.1149/1.3594746
ISSN
0013-4651
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공과대학 > 화학공학부 > Articles
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