Growth of Cu2ZnSnSe4 Thin Films by Selenization of Sputtered Single-Layered Cu-Zn-Sn Metallic Precursors from a Cu-Zn-Sn Alloy Target

Title
Growth of Cu2ZnSnSe4 Thin Films by Selenization of Sputtered Single-Layered Cu-Zn-Sn Metallic Precursors from a Cu-Zn-Sn Alloy Target
Author(s)
김규호아말무하마드이크라술[아말무하마드이크라술]
Keywords
QUATERNARY COMPOUNDS
Issue Date
201109
Publisher
KOREAN INST METALS MATERIALS
Citation
ELECTRONIC MATERIALS LETTERS, v.7, no.3, pp.225 - 230
Abstract
Cu2ZnSnSe4 (CZTSe) thin films were prepared by the simple process of selenization of single-layered metallic Cu-Zn-Sn precursors. These metallic precursors were deposited by radio frequency magnetron sputtering of a ternary Cu-Zn-Sn alloy target. Successive selenization was performed at various temperatures between 250 degrees C and 500 degrees C for 30 min. X-ray diffraction and Raman analysis showed that a single phase of the CZTSe compound can be obtained by selenization at 400 degrees C, while increasing the selenization temperature to 500 degrees C improves the grain size and crystal quality. The direct optical band gap of CZTSe films was calculated to be 1.06 eV to 1.09 eV with a high absorption coefficient on the order of 10(4) cm(-1) for samples selenized at 400 degrees C to 500 degrees C. The obtained films are p-type semiconductors with bulk carrier concentrations of 2.41 to 7.96 x 10(18) cm(3), mobilities of 1.30 cm(2)V(-1)s(-1) to 9.27 cm(2)V(-1)s(-1), and resistivities of 0.20 Omega cm to 1.95 Omega cm.
URI
http://hdl.handle.net/YU.REPOSITORY/24633http://dx.doi.org/10.1007/s13391-011-0909-x
ISSN
1738-8090
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공과대학 > 신소재공학부 > Articles
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