Effects of Annealing Temperature on the Structural and the Optical Properties of ZnO Thin Films Grown on Porous Silicon by Using Plasma-assisted Molecular Beam Epitaxy

Title
Effects of Annealing Temperature on the Structural and the Optical Properties of ZnO Thin Films Grown on Porous Silicon by Using Plasma-assisted Molecular Beam Epitaxy
Author(s)
김종수Min Su Kim[Min Su Kim]Kwang Gug Yim[Kwang Gug Yim]Jae-Young Leem[Jae-Young Leem]Soaram Kim[Soaram Kim]Giwoong Nam[Giwoong Nam]Dong-Yul Lee[Dong-Yul Lee]Jin Soo Kim[Jin Soo Kim]
Keywords
SOL-GEL PROCESS; BUFFER LAYERS; SI SUBSTRATE; MBE; PHOTOLUMINESCENCE; DEPENDENCE; SAPPHIRE; SI(100); AMBIENT
Issue Date
201109
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.3, pp.2343 - 2348
Abstract
Zinc oxide (ZnO) thin films were grown on Si and porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE) and then an annealing process was carried out at various temperatures ranging from 500 to 700 degrees C for 10 min under an argon atmosphere. The effects of the PS and the annealing temperature on the structural and the optical properties of the ZnO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The surface morphology of the ZnO thin films grown on PS exhibited a mountain range-like structure while a typical 3D island surface structure was observed from the ZnO thin films grown on Si. The grain size of the ZnO thin films increased as the annealing temperature was increased without a significant change in its shape. The ZnO thin films grown on PS showed only a ZnO (002) diffraction peak while several diffraction peaks indicating the existence of a large lattice mismatch were observed in the ZnO thin films grown on Si. The PL intensity ratio of the near-band-edge emission (NBE) to deep-level emission (DLE) for the ZnO thin films increased with increasing annealing temperature. The structural and the optical properties of the ZnO thin films were enhanced in the case of PS, and the properties were improved as the annealing temperature was increased to 700 degrees C.
URI
http://hdl.handle.net/YU.REPOSITORY/24586http://dx.doi.org/10.3938/jkps.59.2343
ISSN
0374-4884
Appears in Collections:
이과대학 > 물리학과 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE