ALD-Grown Al2O3 as a Diffusion Barrier for Stainless Steel Substrates for Flexible Cu(InGa)Se-2 Solar Cells
- ALD-Grown Al2O3 as a Diffusion Barrier for Stainless Steel Substrates for Flexible Cu(InGa)Se-2 Solar Cells
- 박현욱[박현욱]; 김성철[김성철]; 배해철[배해철]; 천태훈[천태훈]; 김수현; 김우경
- Issue Date
- TAYLOR & FRANCIS LTD
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.551, pp.147 - 153
- Al2O3 layer deposited by atomic layer deposition was successfully used as a diffusion barrier and insulator for the stainless steel substrate of a Cu(InGa)Se-2 thin film solar cell. The 100-300 nm-thick Al2O3 coating on stainless steel improved the surface smoothness and presented reliable resistance. More importantly, the diffusion of detrimental impurities, such as Fe and Ni, was significantly reduced during CuInSe2 deposition at the substrate temperature of 550 degrees C.
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