Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides

Title
Electrical Characteristics of Pt Schottky Contacts Fabricated on Amorphous Gallium Indium Zinc Oxides
Author(s)
김현수[김현수]김성준[김성준]김경국[김경국]이성남[이성남]안광순
Keywords
THIN-FILM TRANSISTORS; CURRENT-VOLTAGE CHARACTERISTICS; GA-ZN-O; INTERSECTING BEHAVIOR; CARRIER TRANSPORT; SEMICONDUCTOR; DIODES; ELECTRODES; RESISTANCE
Issue Date
201110
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.10
Abstract
The electrical characteristics of Pt Schottky diodes fabricated on amorphous gallium indium zinc oxide were investigated. On the basis of Schottky theory with the thermionic emission mode, an effective Schottky barrier height (SBH) of 0.55 eV and an ideality factor of 3.38 were obtained. The anomalously high ideality factor could be attributed to the statistical potential variations of conduction band edges, as evidenced from the distinctive carrier transport through percolation hopping conduction. In this respect, the barrier inhomogeneity model was applied to obtain reasonable Schottky parameters, yielding the mean barrier height of 1.23 eV with a large standard deviation of 192 mV. (C) 2011 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/24457http://dx.doi.org/10.1143/JJAP.50.105702
ISSN
0021-4922
Appears in Collections:
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE