A Study on Cu(In,Ga)Se-2 Thin-Film Characteristics During Three-Stage Process Using Real-Time Substrate Monitoring

Title
A Study on Cu(In,Ga)Se-2 Thin-Film Characteristics During Three-Stage Process Using Real-Time Substrate Monitoring
Author(s)
전찬욱박순용[박순용]이은우[이은우]이상환[이상환]정우진[정우진]박상욱[박상욱]김우남[김우남]박준성[박준성]서진우[서진우]김대환[김대환]강진규[강진규]송갑득[송갑득]이성호[이성호]
Keywords
SOLAR-CELLS; GROWTH
Issue Date
201110
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.551, pp.295 - 304
Abstract
In this study, to analyze the effect of the second stage (Cu-Se) deposition time on CIGS property, the experiment of controlling the time of the second stage was conducted. Especially, very low values were found for device properties when it was 3300s and 3500s in the second stage. It was observed that excess Cu2-xSe diffused excessively on the surface of the thin film, causing a lot of pores and voids on the surface. With the same evaporation ratio for each source of Cu, In, Ga, and Se, it is very important to apply the 2700s process time for the second stage in order to produce high-efficiency device. The efficiency property of device was checked through solar-simulator (AM1.5G, 100 mW/cm(2) at 25 degrees C). In case the process time of the second stage was 2700s, efficiency was as following: 10.1%, V-oc: 0.53V, J(sc): 33.5 mA/cm(3), fill-factor: 57.2%. The analysis results obtained in this study are expected to be useful for various domestic and overseas research which aim to make high-efficiency solar cells based on proper variation of the second-stage processing time.
URI
http://hdl.handle.net/YU.REPOSITORY/24442http://dx.doi.org/10.1080/15421406.2011.601194
ISSN
1542-1406
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공과대학 > 화학공학부 > Articles
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