The Effect of Post-Deposited Na on Cu(In-x,Ga1-x)Se-2 Solar Cells by using the Na2S Solution

Title
The Effect of Post-Deposited Na on Cu(In-x,Ga1-x)Se-2 Solar Cells by using the Na2S Solution
Author(s)
전찬욱김우남[김우남]박순용[박순용]이은우[이은우]이상환[이상환]박상욱[박상욱]정우진[정우진]서진우[서진우]조정민[조정민]송기봉[송기봉]
Keywords
CUINSE2
Issue Date
201110
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.551, pp.305 - 310
Abstract
It is known that even mixing only a small amount of Na has effect on electrical and structural property of the CIGS absorber layer and, as a result, device efficiency is improved. In this study, unlike the conventional method where Na diffuses from SLG while CIGS absorber is growing, a new method was applied. In the new method, Na precursor is deposited on the CIGS absorber layer grown on Al2O3/SLG to incorporate Na. The effect of Na on the absorber layer was observed using secondary ion meass spectroscopy, Hall measurement system, scanning electron microscopy, and x-ray diffraction. As a result, it was found that, in the post deposition treated CIGS absorber layer, Na has effect mostly on the electrical property of CIGS without significant change of the microstructure.
URI
http://hdl.handle.net/YU.REPOSITORY/24428http://dx.doi.org/10.1080/15421406.2011.601195
ISSN
1542-1406
Appears in Collections:
공과대학 > 화학공학부 > Articles
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